Insulated Gate Bipolar Transistor (IGBT) module
Insulated Gate Bipolar Transistor (IGBT) module 62 mm x 106 mm x 36 mm)
containing 1 IGBT, 1 diode that is connected in anti-parallel to the transistor
to protect the transistor from potential damage caused by reverse current when
the transistor is turned off, and several electrodes. These components are
interconnected by aluminium wires and enclosed in a plastic casing. The
functions of the product are : amplification, oscillation, frequency
conversion, and switching of electrical current. The product is used to
regulate current and voltage in high-power applications and is capable of
handling high current through-put. The voltage rating capacity is 1200 V and
the maximum amp rating is 400 A. Specific applications include : lighting and
heating, motion control applications, electric fans, control of electric pumps,
etc.
HS code: 8541.29.
Classification rationale: GIRs 1 and 6
Source: The Harmonized System Committee – 59th Session – March 2017.