Insulated gate bipolar transistor (igbt) device
CLASSIFICATION OF INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) DEVICE
A packaged insulated gate bipolar transistor (IGBT)
device (48 mm x 94 mm x 29 mm) containing 2 insulated IGBTs, 2 diodes that are
connected in anti-parallel to the transistors in order to protect the transistors
from the damage caused by reverse current when the transistors are turned off,
and several electrodes. The foregoing are interconnected by aluminium wires and
incorporated in a plastic casing which is filled with silicone gel in order to ensure
insulation.
The functions of the product are : amplification, oscillation, frequency
conversion, and switching of electrical current.
The product is used for regulating
current and voltage in highpower applications and is capable of handling high
current through-put. The rating capacity of voltage is 1200 V andthat of current is 150 A.
Specific applications include
elevators, electric railways, electric vehicles, uninterruptible power supply
(UPS), robotics and solar/wind power generators.
SUBHEADING 8541.29 GIRs 1 (Note 8 to Chapter 85) and 6.
HS heading considered: 8504, 8535 and 8541
Cesar Olivier Dalston, www.dalston.com.br
Source: Harmonized System Committee (50th Session –
September 2012).